IRFP A, V, Ohm, N-Channel Power. MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced. IRFP A, V, Ohm, N-channel Power MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced. IRFP, SiHFP Vishay Siliconix. FEATURES. • Dynamic dV/dt Rating. • Repetitive Avalanche Rated. • Isolated Central Mounting Hole.
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Drain Current Current regulator Same type as D.
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These dimensions are measured at the outermost extremes of the plastic body.
IRFP, SiHFP Power MOSFET _ BDTIC a Leading Distributor in China
It also provides greater creepage distance between pins to meet the requirements of most safety specifications. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
Thermal pad contour optional with dimensions D1 and E1.
Repetitive rating; pulse width limited by maximum junction temperature see fig. B, Mar This datasheet is subject to change without notice.
IRFP440 Datasheet Download
Dimension D and E do not include mold flash. Contour of slot optional. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified datashewt. Product names and markings noted herein may be trademarks of their respective owners. Xian and Mingxin actually photo.
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Case Temperature tr td off tf Fig. Please note that some Vishay documentation may still make reference to the IEC definition. To the maximum extent permitted by applicable law, Vishay disclaims i any and all liability arising out of the application or use dagasheet any product, ii any and all liability, including without limitation special, consequential or incidental damages, and iii any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.