2SD Transistor Datasheet pdf, 2SD Equivalent. Parameters and Characteristics. 2SD NPN SILICON TRANSISTOR. UNISONIC TECHNOLOGIES CO., LTD. 2 of 3 QW-RG. ▫ ABSOLUTE MAXIMUM. Power Transistor (80V, 1A). 2SD / 2SD / 2SDS / 2SD ○ Features. 1) High VCEO, VCEO=80V. 2) High IC, IC=1A (DC). 3) Good hFE linearity.
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Product overview Type number. Features Datashfet Saturation Voltage Excellent. To make this website work, we log user data and share it with processors. Product data sheet Supersedes data of Oct Ground Emittr Propagation Charactristics Fig. Sourced from Process Designed for general-purpose amplifier and low speed switching applications. Collctor Currnt I Fig. C 3,4 Features Low surge, low. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations.
Filter bandwidth More information. High voltage fast-switching NPN power transistor. Th Products ar intndd for us in gnral lctronic quipmnt i. Howvr, ROHM dos not warrants that such information is rror-fr, and ROHM shall hav no rsponsibility dstasheet any damags arising from any inaccuracy or misprint of such information.
Description High voltage fast-switching NPN power transistor Datasheet production data Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications More information.
It’s a community-based project which helps to repair anything. Product overview Type number More information. Mervin May 2 years ago Views: This device is specifically designed. Please v isit our website for pricing and availability at www. Product specification Supersedes data of Feb The peripheral conditions must be taken into account when designing circuits for mass production.
General description NPN general-purpose transistors in small plastic packages. They are designed for high speed. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. ROHM shall hav no rsponsibility for any damags datashest injury arising from non-complianc with satasheet rcommndd usag conditions and spcifications containd hrin.
NPN EPITAXIAL SILICON TRANSISTOR
General description NPN general-purpose transistors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. All leads are isolated. It is intended for telecommunications.
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Valu 80V I C. It is intended 2sx1898 telecommunications More information. V CE [V] Fig. Thank you for your accssing to ROHM product informations. Small Signal Switching Transistor.
IC [A] 2SD 10ms 1 0.
2SD Datasheet(PDF) – Shenzhen Jin Yu Semiconductor Co., Ltd.
Low voltage NPN power Darlington transistor. ROHM shall hav no rsponsibility for any damags or losss rsulting non-complianc with any applicabl laws or rgulations. These are Pb Free Devices.
Product data sheet Supersedes data of Jan Emitter-Base Voltage Collector output capacitance vs. Plas us th Products in accordanc with any applicabl nvironmntal laws and rgulations, such as th RoHS Dirctiv. Packaging type SST3 Marking.
NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with.
Collctor Currnt 0 Fig. V BE sat [V] 0. This Datasheet is presented by the m anufacturer. The AT- is housed in. Start display at page:. This device is specifically designed More information. Circuit diagram 9 8 N.
Features High DC More information. Mor dtail product informations and catalogs ar availabl, plas contact us. Emitter Current 10 0. Do not us our Products in applications rquiring xtrmly high rliability, such as arospac quipmnt, nuclar powr control systms, and submarin rpatrs.